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mitsubishi memory card flash memory cards mitsubishi electric 1 /22 feb.1999 rev2.0 8/16-bit data bus flash memory card connector type two- piece 68-pin description the mf8xxx-gmcavxx is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory ic ? s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory . the mf8xxx-gncavxx is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory ic ? s . features 68 pin jeida/pcmcia 8/16 controllable data bus width mf82m1-gmcavxx mf84m1-gmcavxx mf88m1-gmca vxx mf816m-gmcavxx mf820m-gmcavxx mf832m-gmcavxx mf82m1-gncavxx mf84m1-gncavxx mf88m1-gncavxx mf816m-gncavxx mf820m-gncavxx MF832M-GNCAVXX buffered interface ttl interface level program/erase operation by software command control 100,000 program/erase cycles write protect switch operating temperature =0 to 70 c .no vpp required (5v vcc only operation) application s notebook computers printers industrial machines product list item memory attribute data bus access memory outline type name capacity memory width(bits) time ( ns) ic ? s drawing mf82m1-gmcavxx 2mb 8mbit mf84m1-gmcavxx 4mb mf88m1-gmcavxx 8mb yes mf816m-gmcavxx 16mb 16mbit mf820m-gmcavxx 20mb mf832m-gmcavxx 32mb mf82m1-gncavxx 2mb 8mbit mf84m1-gncavxx 4mb mf88m1-gncavxx 8mb no( ffh) mf816m-gncavxx 16mb 16mbit mf820m-gncavxx 20mb MF832M-GNCAVXX 32mb 68p-013 8/16 150
mitsubishi memory card flash memory cards mitsubishi electric 2 /22 feb.1999 rev2.0 pin assignment pin pin no. no. 1 gnd ground 35 gnd ground 2 d3 36 cd1# card detect 1 3 d4 37 d11 4 d5 data i/o 38 d12 5 d6 39 d13 data i/o 6 d7 40 d14 7 ce1# card enable 1 41 d15 8 a10 address input 42 ce2# card enable 2 9 oe# output enable 43 nc 10 a11 44 nc no connection 11 a9 45 nc 12 a8 address input 46 a17 13 a13 47 a18 14 a14 48 a19 15 we# write enable 49 a20 16 nc no connection 50 a21 a21 (nc for < 2 mb types) 17 v cc power supply voltage 51 v cc power supply voltage 18 nc no connection 52 nc no connection 19 a16 53 a22 a22 (nc for < 4 mb types) 20 a15 54 a23 a23 (nc for < 8 mb types) 21 a12 55 a24 a24 (nc for < 16 mb types) 22 a7 56 nc 23 a6 57 nc 24 a5 address input 58 nc no connection 25 a4 59 nc 26 a3 60 nc 27 a2 61 reg# attribute memory select 28 a1 62 bvd2 battery voltage detect 2 29 a0 63 bvd1 battery voltage detect 1 30 d0 64 d8 31 d1 data i/o 65 d9 data i/o 32 d2 66 d10 33 wp write protect 67 cd2# card detect 2 34 gnd ground 68 gnd ground block diagram (mf832m-gmcavxx) symbol symbol function function address input address input bvd2 bvd1 oe# we# a24 a23 a22 a21 a0 a20 a19 a18 a17 a16 a15 a14 a13 a12 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 16 21 8 8 8 13 ce# oe# we# attribute memory 64kbit e 2 prom 1 mode control logic address- bus buffers address- decoder common memory 16mbit flash memory 16 ce# data-bus buffers v cc gnd write protect on we# oe# ce1# ce2# reg# wp off cd1# cd2#
mitsubishi memory card flash memory cards mitsubishi electric 3 /22 feb.1999 rev2.0 functional description the operating mode of the card is determined by five active low control signals (reg#, ce1#, ce2#, oe#, we#), and control registers located in each memory ic. common memory function when the reg# signal is set to a high level common memory is selected. -read mode when each memory ic in the card are switched, the control registers of each memory ic are set to read only mode. operation of the card then depends on the four possible combinations of ce1# and ce2# (note we# should be set to a high level when the device is in read mode except during combination (4) where it ? s condition is unimportant) : (1) if ce1# is set to a low level and ce2# is set to a high level, the card will work as an eight bit data bus width card. data can be accessed via the lower half of the data bus (d0 to d7). (2) if both ce1# and ce2# are set to a low level, data will be accessible via the full sixteen bit data bus width of the card. in this mode lsb of address bus (a0) is ignored. (3) if ce1# is set to a high level and ce2# is set to a low level the odd bytes (only) can be accessed through upper half of the data bus (d8 to d15). this mode is useful when handling the odd (upper) bytes in a sixteen bit interface system. note that a0 is also ignored in this operating condition. (4) if ce1# and ce2# are set to a high level, the card will be in standby mode where it consumes low power. the data bus is kept high impedance. when oe# is set to a low level data can be read from the card, depending on the address applied and the setting of ce1# and ce2# as mentioned above, except under combination (4) when oe# is set to a high level and we# is set to a high level the card is in an output disable mode - write mode by using the 4 combinations of ce1# and ce2# as described under read only above the appropriate data out and command/data in bus selection can be made. if oe# is set to a high level and we# set to a low level, the control register will latch command data applied at the rising edge of the we# signal. note that more than one bus cycle may be required to latch the command and/or the related data-please refer to the command definition table. if oe# is set to a low level and we# is set to a high level the card data can be read from the card depending on the condition of the control register. after latching the command data, the card will go into programming, erasure or other operation mode. for details please refer to the command definition table, each individual command ? s definition and the programming and erasure algorithms. attribute memory function when the reg# signal is set to a low level attribute memory is selected. gm series the card includes a byte wide attribute memory consisting of 8k bytes of e 2 prom located at the even addresses when the card is in the 8 bit operating mode. it is located at sequential addresses on the lower half of the data bus when the card is in 16 bit operating mode i.e. a0 is ignored. to access the attribute memory, first set ce1# and ce2#. set ce1# to low level and ce2# to high level for 8 bit mode or ce1# and ce2# to low level for 16 bit mode. then select the required address. note please take care that in 8 bit mode a0 must be set low for attribute memory access i.e. an even address is applied. in 16 bit mode it is not important whether a0 is high or low. data can then be read by setting oe# to a low level with we set to a high level. writing to the attribute memory can be achieved in byte mode only. to write to attribute memory set oe# to high level and we# to low level. the data to be written will be latched at the rising edge of we#. then, unless we# changes back from high level to low level over 100 s an automatic erase/program operation starts which will complete within 10ms. please also remember that for attribute memory a0 is not applicable and it should be set to low, even addressing only, in 8 bit mode or ignored for 16 bit mode. gn series the card then outputs ffh on the lower half of the data bus (d0 to d7) when the following conditions are applied; (1)ce1#=low level,ce2#=high level,oe#=low level,we#=high level,a0=low level. (2)ce1#=low level,ce2#=low level,oe#=low level,we#=high level.
mitsubishi memory card flash memory cards mitsubishi electric 4 /22 feb.1999 rev2.0 write protect mode the card has a write protect switch on the opposite edge to the connector edge. when it is switched on, the card will be placed into a write protect mode, where data can be read from the card but it cannot be written to it. the wp output pin is set to a high level when the card is in write protect mode and v cc is applied. when the card is not in write protect mode the wp output pin is set to a low level when v cc is applied. by reading the state of the wp output the host system can easily check whether the card is in write protect mode or not. function table (common memory) mode a0 i/o (d15 to d8) i/o (d7 to d0) standby h h h x x x high-z high-z read a(16-bit) h l l l h x odd byte data out even byte data out h h l l h l high-z even byte data out h h l l h h high-z odd byte data out read c(8-bit) h l h l h x odd byte data out high-z h l l h l x command or odd byte data in command or even byte data in h h l h l l high-z command or even byte data in h h l h l h high-z command or odd byte data in h l h h l x command or odd byte data in high-z output disable h x x h h x high-z high-z note 1 : h=v ih , l=v il, x=v ih or v il , high-z= high-impedance to operate refer to the command definition, algorithms and so on. function table (attribute memory ) gm series mode a0 i/o (d15 to d8) i/o (d7 to d0) standby l h h x x x high-z high-z read a(16-bit) l l l l h x data out(not valid) even byte data out read b l h l l h l high-z even byte data out (8-bit) l h l l h h high-z data out(not valid) read c(8-bit) l l h l h x data out(not valid) high-z write a(16-bit) l l l h l x odd byte data in (not valid) even byte data in write b l h l h l l high-z even byte data in (8-bit) l h l h l l high-z odd byte data in (not valid) write c(8-bit) l l h h l x odd byte data in (not valid) high-z output disable l x x h h x high-z high-z gn series mode a0 i/o (d15 to d8) i/o (d7 to d0) standby l h h x x x high-z high-z read a(16-bit) l l l l h x data out(not valid) data out ( ffh) read b l h l l h l high-z data out ( ffh) (8-bit) l h l l h h high-z data out(not valid) read c(8-bit) l l h l h x data out(not valid) high-z output disable l x x h h x high-z high-z note 2 : h=v ih , l=v il, x=v ih or v il , high-z= high-impedance read b(8-bit) write b(8-bit) write a(16-bit) write c(8-bit) ce2# reg# ce1# oe# we# ce2# reg# ce1# oe# we# ce2# reg# ce1# oe# we#
mitsubishi memory card flash memory cards mitsubishi electric 5 /22 feb.1999 rev2.0 command definition the corresponding memories of the card are set to read/write mode and the operation is controlled by the software command written in the control register. command definition table first bus cycle second bus cycle mode address data in mode address data in data out read/reset 1 write za ffh( ffffh) - - - - programme setup/ programme 2 write pa 40(4040)h write pa pd - erase setup/ erase confirm 2 write ba 20(2020)h write ba d0(d0d0)h - programme suspend/resume 2 write pa b0(b0b0)h write pa d0(d0d0)h - erase suspend/ resume 2 write ba b0(b0b0)h write ba d0(d0d0)h - read status register 2 write za 70(7070)h read za - rd clear status register 1 write za 50(5050)h - - - - read device identifier code 2 write za 90(9090)h read dia - did note 3: indicates the basic functions of commands and should not write another commands. refer to the algorithms to operate. signal status is defined in function table and bus status. parenthesized data shows the data for 16 bit mode operation. za=an address of a memory zone (please refer to the memory zone) pa=programming address pd=programming data ba=an address of a memory block (please refer to the memory block) rd=data of status register dia=device identifier address 000000h for manufacturer code 000002h for device code did=device identifier data 2mb=manufacturer code : 89 (8989)h device code : a6h (a6a6)h others=manufacturer code : 89 (8989)h device code : aa (aaaa)h read/reset the memory in the card is switched to read mode by writing ffh ( ffffh for 16 bit operation) into the control resister. this mode is maintained until the contents of register are changed. this mode needs to be written to every memory zone to which access is required. programme setup/ programme the setup programme command sets up the card for programming. it is applied when 40h (4040h for 16 bit operation) is written to control register. programming will take place automatically after latching the address and data which are applied at the rising edge of we#. the completion of programme can be confirmed by reading status register. (for details please refer to the algorithm) erase setup/erase confirm the erase setup is a command to set up the memory block for erasure. writing setup erase command 20h (2020h for 16 bit operation) in the control register followed by erase confirm command d0h (d0d0h for 16 bit operation) will initiate a erasure operation. erasing will take place automatically after the rising edge of we# controlled by a internal timer. the completion of erase can be confirmed by reading status register. (for details please refer to the algorithm) these commands will not erase all the data of a memory card and should be repeated for all the required memory blocks. at an eight bit access mode it should be noticed that the erasure of a memory block will result in odd byte or even byte erasure. command bus cycles
mitsubishi memory card flash memory cards mitsubishi electric 6 /22 feb.1999 rev2.0 erase suspend/erase resume the erase suspend command b0h (b0b0h for 16 bit operation) is a command to generate erase interruption and to read data from another block of selected memory zone. by writing in the control register erase resume command d0h (d0d0h for 16 bit operation), the memory block will continue the erase operation. these commands must be executed in erase algorithm. (for details please refer to the algorithm) read status register the read status register is a command to read the status register ? s data and to make sure programme or erase operations complete successfully. the data of status register can be read after writing 70h (7070h for 16 bit operation) in the control register. the register ? s read data is latched on the falling edge of oe#. at programme or erase, the status register ? s data must be read to verify the results. clear status register the clear status register command will clear data of status register. it is applied when 50h (5050h for 16 bit operation) is written to the control register. if an error occurred during programme or erase, the status register must be cleared before retrying programme or erase. read device identifier codes the read device identifier codes command is implemented by writing 90h (9090h for 16 bit operation) to the command register. after writing the command, manufacturer code can be read at the address of 000000h of the zone and device code can be read at the address 000002h of the zone. each card uses the same type of memory throughout and each memory zone will respond the same code. (do not apply high voltage to a10 pin in order to try and read the device identifier codes as this will result in the card being destroyed.) status register when operating programme or erase, it is necessary to read status register data and to transact these bit. each memory ic used in this card has internal status register to make sure programme or erase operations complete successfully. 7 (15) bit 6 (14) bit 5 (13) bit 4 (12) bit 3 (11) bit 2 (10) bit 1,0 (9,8) bit programme/ erase status bit erase suspend bit erase error bit programme error bit vcc error bit programme suspend bit reserved note 4: ( ) ; for 16 bit operation bit ; field name bit ; field name 7(15) bit ; programme/erase status bit 6(14) bit ; erase suspend bit 0=busy (in programming/erasing) 1=ready 1=erase suspended 5(13) bit ; erase error bit 4(12) bit ; programme error bit 1=erase error 1=programme error 3(11) bit ; vcc error 2(10) bit ; programme suspend bit 1=error of voltage at vcc 1=programme suspended 1,0(9,8) bit ; reserved for future
mitsubishi memory card flash memory cards mitsubishi electric 7 /22 feb.1999 rev2.0 memory zone and block 8 bit mode 16 bit mode 0000001h 001ffffh 0020001h 003ffffh 0300001h 03fffffh block31 block0 block1 . . . . . . zone0 zone2 zone4 zone6 zone8 zone10 zone12 zone14 0000000h 03ffffeh 0400000h 07ffffeh 0800000h 0bffffeh 0c00000h 0fffffeh 1000000h 13ffffeh 1400000h 17ffffeh 1800000h 1bffffeh 1c00000h 1fffffeh zone1 zone3 zone5 zone7 zone9 zone11 zone13 zone15 0000001h 03fffffh 0400001h 07fffffh 0800001h 0bfffffh 0c00001h 0ffffffh 1000001h 13fffffh 1400001h 17fffffh 1800001h 1bfffffh 1c00001h 1ffffffh even byte odd byte 2mb; 1 zone=64kb * 16 blocks others; 1 zone=64kb * 32 blocks note 5 : 2mb;1 zone=0h to 1fffffh address others;1 zone=0h to 3fffffh address zone 2 to 15 do not exist in 2mb zone 2 to 15 do not exist in 4mb zone 4 to 15 do not exist in 8mb zone 8 to 15 do not exist in 16mb zone 10 to 15 do not exist in 20mb note 6 : 2mb;1 zone=0h to 1fffffh address others;1 zone=0h to 3fffffh address zone 1 to 7 do not exist in 2mb zone 1 to 7 do not exist in 4mb zone 2 to 7 do not exist in 8mb zone 4 to 7do not exist in 16mb zone 5 to 7 do not exist in 20mb odd byte 0000000h 001ffffh 0020000h 003ffffh 0300000h 03fffffh block31 block0 block1 . . . . . . zone0 zone1 zone2 zone3 zone4 zone5 zone6 zone7 0000000h 03fffffh 0400000h 07fffffh 0800000h 0bfffffh 0c00000h 0ffffffh 1000000h 13fffffh 1400000h 17fffffh 1800000h 1bfffffh 1c00000h 1ffffffh even byte 2mb; 1 zone=64kw * 16 blocks others; 1 zone=64kw * 32 blocks
mitsubishi memory card flash memory cards mitsubishi electric 8 /22 feb.1999 rev2.0 programme algorithm programme 8 bit operation write the programme setup command (40h) to the address to be programmed. the next write sequence will initiate the programming operation which will end automatically as this period being controlled by an internal timer and the data will be programmed. to make sure that the data is programmed correctly read data of the status register. the read status register command (70h) may or may not be applied to read the data after the programme data input. if the data is programmed step address and programme data according to the above sequence. the next address to be programmed should be written with in a memory zone. after the last programming operation, write the reset command ( ffh) in control register of the programmed memory zones. when overwriting bits programmed as ? 0 ? , programme ? 1 ? or the device reliability is affected. 16 bit operation the algorithm of 16 bit programming is almost same as the 8 bit programming. (please refer to the algorithm and the status of bus at programming) programme suspend 8 bit operation the programme suspend is a command to generate zone programme interruption in order to read or data from another block of the selected memory zone. it is necessary to write the erase suspend command (b0h) in the programme algorithm. the execution of the programme suspend can be confirmed by reading data of the status register. then it is necessary to write the read command ( ffh) in control register in order to read data, after reading the status register ? s data. after the programme resume command (d0h) is written in the control register, the memory zone will continue the programme operation. 16 bit operation most of the algorithm of 16 bit programme suspending is same as the one of the 8 bit programme suspending. (please refer to the algorithm and the state of bus at programme suspending.) erase algorithm erase 8 bit operation write the erase setup command (20h) and erase confirm command (d0h) for the applicable block address. an erasure operation will then commence which will be finished in 1.6s typical or less this being automatically controlled by an internal timer. to make sure that the data is erased correctly and read data of the status register. the read status register command (70h) may or may not be applied to read the data after the erase confirm command. after erasure has completed write the reset command ( ffh) to the control register, proceed to the erase operation for the next memory block. 16 bit operation most of the algorithm of 16 bit erasure is same as the one of the 8 bit erasure. (please refer to the algorithm and the state of bus at erasure.) erase suspend 8 bit operation the erase suspend is a command to generate block erase interruption in order to read or programme data from another block of the selected memory zone. it is necessary to write the erase suspend command (b0h) in the erase algorithm. the execution of the erase suspend can be confirmed by reading data of the status register. then it is necessary to write the read command ( ffh) in control register in order to read data, after reading the status register ? s data. after the erase resume command (d0h) is written in the control register, the memory block will continue erase operation. 16 bit operation most of the algorithm of 16 bit erase suspending is same as the one of the 8 bit erase suspending. (please refer to the algorithm and the state of bus at erase suspending.)
mitsubishi memory card flash memory cards mitsubishi electric 9 /22 feb.1999 rev2.0 programme algorithm 8 bit mode programme start address=first location write programme data read status register check programme status bit check vcc error bit check programme error bit last address? write reset command( ffh) programme passed write programme setup command(40h) programme failed write status register clear command(50h) address= next address bit 7= ? 0 ? bit 3= ? 0 ? bit 7= ? 1 ? bit 3= ? 1 ? bit 4= ? 1 ? bit 4= ? 0 ? no yes no yes programme suspend? programme suspend loop a
mitsubishi memory card flash memory cards mitsubishi electric 10 /22 feb.1999 rev2.0 programme algorithm 16 bit mode programme start address=first location write programme data read status register check programme status bit check vcc error bit check programme error bit last address? write reset command( ffffh) programme passed write programme setup command(4040h) programme failed write status register clear command(5050h) address= next address bit 7.and.15= ? 0 ? bit 3.or.11= ? 0 ? bit 7.and.15= ? 1 ? bit 3.or11= ? 1 ? bit 4.or.12= ? 1 ? bit 4.or.12= ? 0 ? no yes no yes programme suspend? programme suspend loop b
mitsubishi memory card flash memory cards mitsubishi electric 11 /22 feb.1999 rev2.0 note 7: if vcc error bit is detected, try to programme again at vcc level. this is a programme algorithm for a memory zone and not for a card. reading data from the zone generating programme suspend. .or. : =logical or ; .and. : =logical and b bi t 2.= ? 0 ? write read command( ffh) write resume command(d0h) read data programme suspend passed read status register bit 2.= ? 1 ? write suspend command(b0h) check programme status bit check programme suspend bit bit 7.= ? 1 ? bit 7.= ? 0 ? a bi t 2.and.10.= ? 0 ? write read command( ffffh) write resume command(d0d0h) read data programme suspend passed read status register bit 2.and.10.= ? 1 ? write suspend command(b0b0h) check programme status bit check programme suspend bit bit 7.and.15.= ? 1 ? bit 7.and.15.= ? 0 ?
mitsubishi memory card flash memory cards mitsubishi electric 12 /22 feb.1999 rev2.0 erase algorithm 8 bit mode write status register clear command(50h) bit 7= ? 0 ? no write erase command(d0h) check erase status bit check control command bit write reset command( ffh) erase start address=block address read status register check vcc error bit erase passed write erase setup command(20h) bit 3= ? 0 ? bit 7 = ? 1 ? bit 3= ? 1 ? bit 4. or. 5= ? 1 ? bit 4. or. .5= ? 0 ? yes check erase error bit erase suspend? erase suspend loop c erase failed bit 5.or.13= ? 1 ? bit 5.or.13 = ? 0 ?
mitsubishi memory card flash memory cards mitsubishi electric 13 /22 feb.1999 rev2.0 erase algorithm 16 bit mode write status register clear command(50h) bit 7.and.15= ? 0 ? no write erase command(d0d0h) check erase status bit check control command bit write reset command( ffh) erase start address=block address read status register check vcc error bit erase passed write erase setup command(2020h) bit 3.or.11= ? 0 ? bit 7.and>15 = ? 1 ? bit 3.or.11= ? 1 ? bit 4.or.5 or. 12.or.13= ? 1 ? bit 4.or.5 or. 12.or.13= ? 0 ? yes check erase error bit erase suspend? erase suspend loop d erase failed bit 5.or.13= ? 1 ? bit 5 .or.13= ? 0 ?
mitsubishi memory card flash memory cards mitsubishi electric 14 /22 feb.1999 rev2.0 note 8 : if vcc error bit is detected, try to programme again at vcc level. this is an erase algorithm for a memor y block and not for a card. reading data from blocks other than the suspended block in the zone generating erase suspend. .or. : =logical or ; .and. : =logical and absolute maximum ratings symbol parameter conditions ratings unit v cc v cc supply voltage -0.5 to 6.5 v v i input voltage -0.3 to v cc +0.3 v v o output voltage 0 to v cc v t opr operating temperature read/write operation 0 to 70 c t stg storage temperature -40 to 80 c with respect to gnd d bi t 6.= ? 0 ? read / programme write resume command(d0h) programme suspend passed read status register bit 6.= ? 1 ? write suspend command(b0h) check erase status bit check erase suspend bit bit 7.= ? 1 ? bit 7.= ? 0 ? c bi t 6.and.15.= ? 0 ? read / programme write resume command(d0d0h) programme suspend passed read status register bit 6.and.15.= ? 1 ? write suspend command(b0b0h) check erase status bit check erase suspend bit bit 7.and.15.= ? 1 ? bit 7.and.15.= ? 0 ?
mitsubishi memory card flash memory cards mitsubishi electric 15 /22 feb.1999 rev2.0 recommended operating conditions (ta=0 to 55 c, unless otherwise noted) limits min. typ. max. v cc v cc supply voltage 4.75 5.0 5.25 v v ih high input voltage 2.4 v cc v v il low input voltage 0 0.8 v number of simultaneous activated programme 1 zone memory zones/blocks erase 1 block capacitance limits min. typ. max. c i input capacitance v i =gnd, v i =25mvrms, f=1 mh z , ta=25 c 45 pf c o output capacitance v i =gnd, v o =25mvrms, f=1 mh z , ta=25 c 45 pf note 9 : these parameters are not 100% tested. electrical characteristics ta= 0 to 55 c, vcc=5v+/-5%, unless otherwise noted) limits min. typ. max. i oh =-0.1ma, bvdn 2.4 i oh =-1.0ma, other outputs 2.4 v ol low output voltage i ol= 2ma 0 0.4 v i ih high input current v i =v cc v 10 a ce1#, ce2#, oe#, we#, reg# -10 -70 other inputs -10 high output current in off state 10 low output current in off state -10 active v cc supply current 1 ce1#=ce2#=v il , other inputs=v ih or v il , outputs=open active v cc supply current 2 ce1#=ce2# < 0.2v, other inputs < 0.2v or > v cc -0.2v, outputs=open 2mb 6.0 4mb 6.0 i cc 2 ? 1 standby v cc ce1#=ce2#=v ih , other 8mb 10 supply current 1 inputs=v ih or v il 16mb 18 ma 20mb 22 32mb 34 2mb 0.05 1.2 4mb 0.05 1.4 i cc 2 ? 2 standby v cc supply ce1#=ce2# > v cc -0.2v, 8mb 0.10 1.8 current 2 other inputs < 0.2v 16mb 0.20 1.8 a or > v cc -0.2v 20mb 0.25 2.0 32mb 0.40 2.6 note 10 : currents flowing into the card are taken as positive (unsigned). typical values are measured at v cc =5.0v,ta=25 c. the card consumes active current at programming, erasure even if both ce1# and ce2# are high level. symbol conditions parameter v oh low output voltage i il v i =0v high output current ce1#=ce2#=v ih or oe#=v ih ,v o (dm)=v cc i ozh symbol ce1#=ce2#=v ih or oe#=v ih , v o (dm)=0v parameter i ozl test conditions 130 n act i cc 1 ? 1 symbol 200 parameter unit 110 i cc 1 ? 2 180 unit v a a a ma ma
mitsubishi memory card flash memory cards mitsubishi electric 16 /22 feb.1999 rev2.0 switching characteristics (common memory) ( ta= 0 to 55 c, vcc=5v+/-5% ) limits min. typ. max. tcr read cycle time 150 ns ta(a) address access time 150 ns ta(ce) card enable access time 150 ns ta(oe) output enable access time 75 ns tdis(ce) output disable time (from ce#) 75 ns tdis(oe) output disable time (from oe#) 75 ns ten(ce) output enable time (from ce#) 5 ns ten(oe) output enable time (from oe#) 5 ns tv(a) data valid time after address change 0 ns timing requirements (common memory) ( ta= 0 to 55 c, vcc=5v+/-5% ) limits min. typ. max. tcw write cycle time 150 ns t su (a) address setup time 20 ns trec(we) write recovery time 20 ns tsu(d-weh) data setup time 50 ns th(d) data hold time 20 ns t wrr write recovery time before read 0 ns tsu(a-weh) address setup time to write enable high 100 ns tsu(ce) card enable setup time 20 ns th(ce) card enable hold time 20 ns tw(we) write pulse width 80 ns t wph write pulse width high 40 ns t dp duration of programming operation 6.5 s t de duration of erase operation 900 ms note 11 : refer to switching characteristics for read parameters timing diagram common memory read unit symbol parameter symbol unit parameter t dis (ce) ta(oe) tcr t a (a) ta(ce) ten(ce) ten(oe) tdis(oe) t v (a) output valid high-z an v ih dm (d out ) v oh v ol ce# v ih v il v il oe# v ih v il we# = ? h ? level, reg# = ? h ? level
mitsubishi memory card flash memory cards mitsubishi electric 17 /22 feb.1999 rev2.0 timing diagram (common memory) programme mode erase mode dm ce# an oe# we# pa tcw tsu(a) tsu(a-weh) t wrr th(ce) trec(we) pa pa pa t dp t wph programme set up programme status register reset tsu(ce) high-z tsu(d-weh) th(we) 40 din dout ff v ih v il v ih v il v ih v il v ih v il v oh v ol tw(we) reg# = ? h ? level dm ce# an oe# we# pa tcw tsu(a) tsu(a-weh) t wrr th(ce) trec(we) pa pa pa t de t wph erese set up erase status register reset tsu(ce) high-z tsu(d-weh) th(we) 40 din dout ff v ih v il v ih v il v ih v il v ih v il v oh v ol tw(we) reg# = ? h ? level
mitsubishi memory card flash memory cards mitsubishi electric 18 /22 feb.1999 rev2.0 switching characteristics (attribute memory) read cycle ( ta= 0 to 55 c, v cc =5v+/-5%, unless otherwise noted) limits min. typ. max. unit tcrr read cycle time 300 ns ta(a)r address access time 300 ns ta(ce)r card enable access time 300 ns ta(oe)r output enable access time 150 ns tdis( dis)r output disable time (from ce#) 100 ns tdis(oe)r output disable time (from oe#) 100 ns ten(ce)r output enable time (from ce#) 5 ns ten(ce)r output enable time (from oe#) 5 ns tv(a)r data valid time after address change 0 ns timing requirements (attribute memory) write cycle gm series only ( ta= 0 to 55 c, v cc =5v+/-5%, unless otherwise noted) limits min. typ. max. unit t as r address setup time 30 ns t ah r address hold time 30 ns t cs r ce setup time 40 ns t ch r ce hold time 30 ns t ds r data setup time 120 ns t dh r data hold time 40 ns t oes r oe setup time 30 ns t oeh r oe hold time 40 ns t wp r write pulse width 170 ns t dl r data latch time 120 ns t bl r byte load cycle time 100 s t wc r write cycle time 10 ms timing diagram (attribute memory) read symbol parameter symbol parameter t c rr ta(a)r an v ih v il ce# ta(ce)r ten(ce)r tv(a)r tdis(ce)r v ih output valid ten(oe)r high-z dm (d out ) v oh v ol v il tdis(oe)r oe# v ih v il ta(oe)r we# = ? h ? level, reg# = ? l ? level
mitsubishi memory card flash memory cards mitsubishi electric 19 /22 feb.1999 rev2.0 byte write (gm series only) page mode write ( gm series only) tdis (oe) r oe# v ih hi-z hi-z dm (d out ) v oh v ol t ds r t dh r t en(oe) r dm (d in ) v ih v il v il v ih v il t ah r t ch r t cs r t as r t wp r t oeh r t oes r an ce# v ih v il v il we# v ih reg# = ? l ? level tdis ( oe ) r hi-z an (n>5) an (a 0 ~a 5 ) ce# oe# we# d in tw ( we ) r t dl r tsu ( oe-we ) r tsu ( a ) r t blc r th ( ce ) r trec ( we ) r tsu ( ce ) r t ( d-weh ) r th ( d ) r 0h 2h 4h 3ch 3eh d out hi-z th ( oe-we ) r tc wr reg# = ? l ? level
mitsubishi memory card flash memory cards mitsubishi electric 20 /22 feb.1999 rev2.0 note 12 : ac test conditions input pulse levels : v il =0.4v, v ih =2.8v input pulse rise, fall time : t r =t f =10ns reference voltage input : v il =0.8v, v ih =2.4v output : v ol =0.8v, v oh =2.0v (ten and t dis are measured when output voltage is 500mv from steady state. ) load : 100pf+ 1 ttl gate 5pf+ 1 ttl gate (at t en and t dis measuring) 13 : the data write is performed during the interval when both ce# and we# are ? l ? level. 14 : do not apply inverted phase signal externally when dm pin is in output mode. 15 : ce# is indicated as follows: read a/write a : ce#=ce1#=ce2# read b/write b : ce#=ce1#, ce2#= ? h ? level read c/write c : ce#=ce2#, ce1#= ? h ? level 16: indicates the don ? t care input. recommended power up/down conditions (ta=0 to 55 c, unless otherwise noted) limits min. max. unit 0v < v cc <2v 0 v i v vi(ce) ce input voltage 2v < v cc < v ih v cc -0.1 v i v v ih < v cc v ih v i v t su (ce) ce# setup time 5.0 ms t rec (ce) ce# recovery time 1.0 s t pr (vcc) v cc rise time 0.1 300 ms t pf (vcc) v cc fall time 3.0 300 ms power up timing diagram block program/erase time limits typ. max. block erase time 1.1 10 s block program time 0.5 2.1 s note 17 : at ta=25 c, vcc=5v byte/word program time is about 8 s (typical), but not guaranteed. unit parameters insertion 0v tpr( vcc) tsu(ce) 4.75v 0.9 v cc v ih 2v 0.1 v cc v cc ce1#,ce2# withdraw 0v tpr( vcc) tsu(ce) 4.75v 0.9 v cc v ih 2v 0.1 v cc v cc ce1#,ce2# symbol parameter test conditions
mitsubishi memory card flash memory cards mitsubishi electric 21/22 feb.1999 rev2.0 ! warning ( if card with battery / card with auxiliary battery ) (1)do not charge, short, disassemble, deform, heat, or throw the batteries into fire, as they may ignite, overheat, rupture or explode. (2)place the batteries out of the reach of children. if somebody swallows them, they should see a doctor immediately. (3)when discarding or storing the batteries, wrap them individually with cellophane tape or other nonconductive material. if they are positioned in contact with any other metals or batteries, they may explode, rupture or leak electrolyte solution. ! caution this product is not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for a special applications, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. keep safety first in your circuit designs ! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits,(2)use of non-flammable material or (3)prevention against any malfunction or mishap. notes regarding these materials l these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer ? s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or a third party. l mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third- party ? s rights, originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. l all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. l for instruction on proper use of the ic card, thoroughly read the manual attached to the product before use. after reading please store the manual in s safe place for future reference. l the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in whole or in part these materials. l if these products or technologies are subject the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than approved destination. any diversion or re-export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. l please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
mitsubishi memory card flash memory cards mitsubishi electric 22/22 feb.1999 rev2.0 outline(68p-013)

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